| dc.contributor.advisor | Arendse, Christopher J. | |
| dc.contributor.advisor | Muller, T.F.G. | |
| dc.contributor.advisor | Malgas, G. | |
| dc.contributor.author | Towfie, Nazley | |
| dc.date.accessioned | 2014-11-13T09:58:29Z | |
| dc.date.available | 2014-11-13T09:58:29Z | |
| dc.date.issued | 2013 | |
| dc.identifier.uri | http://hdl.handle.net/11394/3841 | |
| dc.description | >Magister Scientiae - MSc | en_US |
| dc.description.abstract | This study reports on the effects of hydrogen dilution and deposition time on six silicon thin films deposited at six specific deposition regimes. The thin film properties are investigated via X-Ray diffraction analysis, raman spectroscopy, fourier transform infra-red spectroscopy, elastic recoil detection analysis, scanning and transmission electron microscopy and UV-visible spectroscopy. This investigation revealed the dominating etching effect of atomic hydrogen with
the increase in hydrogen dilution and a bonded hydrogen content (CH) exceeding 10 at.% for each of the six thin films. The optically determined void volume fraction and static refractive index remain constant, for each thin film, with the change in CH | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | University of the Western Cape | en_US |
| dc.subject | Hydrogenated amorphous silicon | en_US |
| dc.subject | Hydrogenated nanocrystalline silicon | en_US |
| dc.subject | Hot wire chemical vapour deposition | en_US |
| dc.subject | Tandem solar cells | en_US |
| dc.subject | Nano-voids | en_US |
| dc.subject | Morphology | en_US |
| dc.subject | Microstructure | en_US |
| dc.subject | Hydrogen etching | en_US |
| dc.title | Dynamic variation of hydrogen dilution during hot-wire chemical vapour deposition of silicon thin films | en_US |
| dc.type | Thesis | en_US |
| dc.rights.holder | University of the Western Cape | en_US |
