Tin-oxide thin films by thermal oxidation
Abstract
Tin dioxide (SnO2) thin films are a worthy candidate for an electron transport layer (ETL) in
perovskite solar cells, due to its suitable energy level, high electron mobility of 240 cm2 v-1 s-
1, desirable band gap of 3.6 - 4.0 eV, and ultimately proves to be suited for a low temperature
thermal oxidation technique for ETL production. A variety of methods are available to
prepare SnO2 thin films such as spin and dip coating and chemical bath deposition. However,
the customary solid-state method, which incorporates thermal decomposition and oxidation
of a metallic Sn precursor compound in an oxygen abundant atmosphere prevails to be low in
cost, is repeatable and allows for large-scale processing.