Tin-oxide thin films by thermal oxidation
James, Amy Frances
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Tin dioxide (SnO2) thin films are a worthy candidate for an electron transport layer (ETL) in perovskite solar cells, due to its suitable energy level, high electron mobility of 240 cm2 v-1 s- 1, desirable band gap of 3.6 - 4.0 eV, and ultimately proves to be suited for a low temperature thermal oxidation technique for ETL production. A variety of methods are available to prepare SnO2 thin films such as spin and dip coating and chemical bath deposition. However, the customary solid-state method, which incorporates thermal decomposition and oxidation of a metallic Sn precursor compound in an oxygen abundant atmosphere prevails to be low in cost, is repeatable and allows for large-scale processing.