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dc.contributor.advisorKnoesen, D
dc.contributor.authorArendse, CJ
dc.date.accessioned2023-06-12T20:14:46Z
dc.date.available2023-06-12T20:14:46Z
dc.date.issued2004
dc.identifier.urihttp://hdl.handle.net/11394/10182
dc.descriptionDoctor Scientiae - DScen_US
dc.description.abstractHydrogenated amorphous silicon (a-Si:H) thin films are presently used in several large-area thin-film applications. However, one major concern of a-Si:H is the fact that the stability of the material degrades when it is exposed to prolonged sunlight illumination. This effect, referred to as the Staebler-Wronski effect (SWE), is however reduced when using hot-wire (HW) deposited a-Si:H material with a low hydrogen concentration and favorable microstructure. In this thesis we report on the thermal stability of HW-deposited a-Si:H thin films, with different H-concentrations and bonding configurations, when exposed to elevated temperatures in excess of 100 "C.en_US
dc.language.isoenen_US
dc.publisherUWCen_US
dc.subjectraman scatteringen_US
dc.subjectstructural orderen_US
dc.subjectmicrostructureen_US
dc.subjectmicrovoidsen_US
dc.titleThermal stability and defect structure of hot-wire deposited amorphous siliconen_US


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