p- and e- type Semiconductor layers optimization for efficient perovskite photovoltaics

Abstract

Perovskite solar cells have attracted a tremendous amount of research interest in the scientific community recently, owing to their remarkable performance reaching up to 22% power conversion efficiency (PCE) in merely 6 to 7 years of development. Numerous advantages such as reduced price of raw materials, ease of fabrication and so on, have contributed to their increased popularity. However, there are several factors that limits their performance, among which is recombination process of charge carriers occurring at the TiO2/Perovskite interface. Therefore, it is crucial to prevent charge carriers recombination at the photo anode/electrode interface, in order to improve the overall efficiency of the Perovskite solar cell (PSC) devices.